GSO IEC 62047-9:2014
IEC 62047-9:2011
Gulf Standard
Current Edition
·
Approved on
25 December 2014
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
GSO IEC 62047-9:2014 Files
English
49 Pages
Current Edition
Reference Language
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GSO IEC 62047-9:2014 Scope
This standard describes bonding strength measurement method of wafer to wafer bonding,
type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic
bonding, etc., and applicable structure size during MEMS processing/assembly. The
applicable wafer thickness is in the range of 10 µm to several millimeters.
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